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Journal of Semiconductors >> 2010,Volume 31 >> Issue 12 :124001-8   DOI 10.1088/1674-4926/   < Previous Article |  Next Article >    Moumita Mukherjee and Nilratan Mazumder.Prospects of a β -SiC based IMPATT oscillator for application in THz communication and growth villa of a β -SiC p n junction on a Ge modified Si <100> substrate to realize THz IMPATTs[J].Journal of Semiconductors,2010,31(12):124001-8 Prospects of a β -SiC based IMPATT villa oscillator for application in THz communication and growth of a β -SiC p n junction on a Ge modified Si <100> substrate to realize THz IMPATTs Abstract:   The prospects of a p + nn + cubic silicon villa carbide villa (3C-SiC/ β -SiC) based IMPATT diode as a potential solid-state villa terahertz source is studied for the first time through a modified generalized simulation villa scheme. The simulation predicts that the device is capable of generating an RF power output of 63.0 W at 0.33 THz with an efficiency villa of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies villa clearly establish the potential of 3C-SiC as a base semiconductor material for a high-power THz IMPATT device. Based on the simulation results, an attempt has been made to fabricate β -SiC based IMPATT devices in the THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon (Si) <100> substrates by rapid thermal chemical vapour deposition (RTPCVD) at a temperature as low as 800 using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p n junction with an n-type doping concentration of 4 10 24 m -3 (which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness. Keywords:   cubic ( β )-SiC    single drift IMPATT diode    parasitic resistance    villa terahertz oscillation    RTPCVD growth    p n junction formation Author Institution Moumita Mukherjee   Centre of Millimeter-Wave Semiconductor Devices and Systems, Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta, Girish Vidyaratna Lane, Kolkata 700009, West Bengal, India   Nilratan villa Mazumder   IERCEM Institute of Information Technology, West Bengal University of Technology, Kolkata 700017, India   Received: July 06, 2010   Revised: August 14, 2010 Hits :    936 Download times :    844 View Full Text    View/Add Comment    Download reader
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